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Please use this identifier to cite or link to this item:
http://hdl.handle.net/1885/43098
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| Title: | Influence of reactive ion etching on the minority carrier lifetime in P-type Si |
| Authors: | Deenapanray, P.N.K. Athukorala, C.S. Macdonald, D. Everett, V.E. Webber, K.J. Blakers, A.W. |
| Keywords: | Reactive ionetching LifetimeDLTS Shockley-Read-Hallmodel |
| Issue Date: | 27-Mar-2006 |
| Series/Report no.: | 20th EC PV Solar Energy Conference |
| Abstract: | Quasi-steady-state photoconductance (QSSPC) and deep level transient spectroscopy (DLTS) were used to characterize the recombination properties of reactive ion etched p-type Si. The effective lifetime of the plasma-processed samples degraded after etching, with the densities of recombination centers increasing linearly with etch time, before reaching a plateau. Evidence is provided for the long-range (> 2 µm) migration of defects in the samples plasma-etched at room temperature. The relationship between rf power and lifetime degradation is also discussed. A defect with energy position at (0.31 ± 0.02) eV was detected by DLTS in RIE p-Si, whereas no defect level was measured in n-type Si. We demonstrate that this energy level could be used to adequately model the injection-dependence of the measured carrier lifetimes using the Shockley-Read-Hall model. |
| URI: | http://hdl.handle.net/1885/43098 |
| Appears in Collections: | ePrints
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